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A ground-breaking modeling toolkit to predict current of new type of memory

Resistive-switching memory (RSM) is an emerging candidate for next-generation memory and computing devices, such as storage-class memory devices, multilevel memories and as a synapse in neuromorphic computing. A significant challenge in the global research efforts towards better energy technologies is efficient and accurate device modeling. Now, researchers have created a new modeling toolkit which can predict the current of a new type of memory with excellent accuracy.

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